Investigation on the Enhancement of p‑GaN Gate Characteristics of Enhanced Si‑based GaN HEMT
BAO Cheng, WANG Denggui, REN Chunjiang, ZHOU Jianjun, NI Zhiyuan, ZHANG Junyun
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS . 2025, (1): 0 .  DOI: 10.12450/j.gtdzx.202501002

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