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中文
Research Progress on β‑Ga
2
O
3
Homoepitaxial and Al Doped Heterojunction Epitaxial Growth by MOCVD
LIU Yang
1
, HE Yunlong
1
, CHEN Guran
2
, LU Xiaoli
1
, ZHENG Xuefeng
1
, MA Xiaohua
1
, HAO Yue
1
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS . 2025, (
1
): 0 . DOI: 10.12450/j.gtdzx.202501001