Preparation of a 340 GHz Low-noise Amplifier Based on 101.6 mm Wafer 35 nm InP HEMT Process
SUN Yuan, CHEN Zhongfei, LU Haiyan, WU Shaobing, REN Chunjiang, WANG Weibo, ZHANG Junyun
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS . 2024, (5): 379 -383 .  DOI: 10.12450/j.gtdzx.202405003

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