Study on Epitaxial and Device Properties of 0.25 μm Emitter InP DHBT

MA Ben

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2023, Vol. 43 ›› Issue (6) : 510-513.

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PDF(578 KB)
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2023, Vol. 43 ›› Issue (6) : 510-513.
Device Physics & Device Simulation

Study on Epitaxial and Device Properties of 0.25 μm Emitter InP DHBT

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2023, 43(6): 510-513

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