Study on the Total Dose Effect of Silicon‑based N‑channel VDMOS with Different Bias

LI Xiao

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2023, Vol. 43 ›› Issue (5) : 450-455.

PDF(768 KB)
PDF(768 KB)
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2023, Vol. 43 ›› Issue (5) : 450-455.
Material & Technology

Study on the Total Dose Effect of Silicon‑based N‑channel VDMOS with Different Bias

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2023, 43(5): 450-455

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(768 KB)

Accesses

Citation

Detail
Sections
Recommended
Copyright © RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS, All Rights Reserved.
Powered by Beijing Magtech Co. Ltd,.

/

〈 〉