The Optimal Design of the Lateral Enhancement‑mode Double‑side‑gate GaN JFET

YU Jing MIAO Ailin XU Liang ZHU Hong CHEN Dunjun

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2023, Vol. 43 ›› Issue (5) : 375-380.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2023, Vol. 43 ›› Issue (5) : 375-380.
Wideband Semiconductor

The Optimal Design of the Lateral Enhancement‑mode Double‑side‑gate GaN JFET

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2023, 43(5): 375-380

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