Effect of Electric Field on the Structural and Electronic Properties of Carbon Interstitial Defects at SiC/SiO Interface

ZHANG Yuan

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2023, Vol. 43 ›› Issue (3) : 208-213.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2023, Vol. 43 ›› Issue (3) : 208-213.
Device Physics & Device Simulation

Effect of Electric Field on the Structural and Electronic Properties of Carbon Interstitial Defects at SiC/SiO Interface

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2023, 43(3): 208-213

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