Design and Optimization of the Novel Gate-all-around Line Tunneling FETs with Germanium Source

MI Hao, MA Xin, MIAO Yuanhao, LU Bin

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (6) : 441-448.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (6) : 441-448.
Device Physics & Device Simulation

Design and Optimization of the Novel Gate-all-around Line Tunneling FETs with Germanium Source

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2022, 42(6): 441-448

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