Comparison of Radiation Damage between Threshold Voltage and Switching Response of SiC Power MOSFET

FENG Haonan, YANG Sheng, LIANG Xiaowen, SUN Jing, ZHANG Dan, PU Xiaojuan, YU Xuefeng

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (5) : 412-416.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (5) : 412-416.
Material & Technologys

Comparison of Radiation Damage between Threshold Voltage and Switching Response of SiC Power MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2022, 42(5): 412-416

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