Design of High Voltage Power MOS Device Terminal Based on Buried Layer Structure

SONG Yingxin, MA Jie, HOU Jie, SUN Defu, LIU Jinsong, LI Zehong, REN Min

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (5) : 352-356.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (5) : 352-356.
Device Physics & Device Simulation

Design of High Voltage Power MOS Device Terminal Based on Buried Layer Structure

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2022, 42(5): 352-356

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