Graphene Grown by Using 3C/4H-SiC Hetero-epitaxial Films

WANG Yi, ZHOU Ping, ZHAO Zhifei, LI Yun

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (4) : 329-334.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (4) : 329-334.
Material & Technologys

Graphene Grown by Using 3C/4H-SiC Hetero-epitaxial Films

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2022, 42(4): 329-334

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