Study on the Influence of Gate Structure Defect on GaN HEMT Device Performance

SHAO Guojian, CHEN Zhenglian, LIN Gang, YU Yong, SHEN Jie, CHEN Tao, LIU Zhu

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (3) : 234-238.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (3) : 234-238.
Material & Technologys

Study on the Influence of Gate Structure Defect on GaN HEMT Device Performance

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2022, 42(3): 234-238

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