Simulation of Ionizing Radiation Effect of NPN Bipolar Junction Transistor Based on Three-dimensional Model

SHAN Yuhao, LIU Yanfei, ZHENG Hao, PENG Zheng

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (3) : 177-183.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2022, Vol. 42 ›› Issue (3) : 177-183.
Device Physics & Device Simulation

Simulation of Ionizing Radiation Effect of NPN Bipolar Junction Transistor Based on Three-dimensional Model

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2022, 42(3): 177-183

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