Optimized Design of GaN Vertical Fin Power Field-effect Transistor

YANG Jiaying, LI Jian, HUANG Hao, ZHENG Ziyang, WU Jianhua, HE Wei

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (5) : 359-364.

PDF(1006 KB)
PDF(1006 KB)
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (5) : 359-364.
Device Physics & Device Simulation

Optimized Design of GaN Vertical Fin Power Field-effect Transistor

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2021, 41(5): 359-364

References

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(1006 KB)

Accesses

Citation

Detail

Sections
Recommended

/