An Improved High Frequency Model for GaN HEMT

YU Guodong, WANG Zhensheng, WANG Chujun, WANG Weibo, TAO Hongqi

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (5) : 354-358.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (5) : 354-358.
Device Physics & Device Simulation

An Improved High Frequency Model for GaN HEMT

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2021, 41(5): 354-358

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