Design of Asymmetric Doherty Power Amplifier Based on GaN HEMT

WANG Rongchang, CHEN Xinyu, ZHANG Lü, CHEN Zhiyong, ZHU Chao, ZENG Ruifeng

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (5) : 343-347.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (5) : 343-347.
Wideband Semiconductor

Design of Asymmetric Doherty Power Amplifier Based on GaN HEMT

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2021, 41(5): 343-347

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