Study on the Effect of Surface Charge on Transport Properties of GaN Based HEMT Devices

PAN Chuanzhen, CHEN Peng, XU Ru, FENG Jianbo, ZHAO Hong, SHI Yi, ZHANG Rong, ZHENG Youdou

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (4) : 251-257.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (4) : 251-257.
Device Physics & Device Simulation

Study on the Effect of Surface Charge on Transport Properties of GaN Based HEMT Devices

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2021, 41(4): 251-257

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