Simulation and Fabrication of 15 kV/ 10 A SiC Power MOSFET

LI Shiyan, YANG Xiaolei, HUANG Runhua, TANG Wei, ZHAO Zhifei, BAI Song

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (2) : 93-97.

PDF(938 KB)
PDF(938 KB)
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2021, Vol. 41 ›› Issue (2) : 93-97.
Wideband Semiconductor

Simulation and Fabrication of 15 kV/ 10 A SiC Power MOSFET

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2021, 41(2): 93-97

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(938 KB)

Accesses

Citation

Detail
Sections
Recommended
Copyright © RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS, All Rights Reserved.
Powered by Beijing Magtech Co. Ltd,.

/

〈 〉