The Influence of Heavy Ion Radiation on GaN HEMT Device

ZHANG Mingchuan, YU Qingkui, XI Hongjie, LIN Gang, ZHONG Shichang, LI Yuchao

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (5) : 389-393.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (5) : 389-393.
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The Influence of Heavy Ion Radiation on GaN HEMT Device

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2020, 40(5): 389-393

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