Research on Admittance Domain Behavior Model of RF Power Transistor Based on Padé Approximation

CAI Jialin, LIU Jun

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (5) : 328-332.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (5) : 328-332.
Device Physics & Device Simulation

Research on Admittance Domain Behavior Model of RF Power Transistor Based on Padé Approximation

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2020, 40(5): 328-332

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