Study on Gate Current Breakdown Behavior of Lattice-matched InAlN/GaN HEMTs

JIN Ning, CHEN Leilei, LI Jinxiao, ZHOU Hao, YAN Dawei, GU Xiaofeng

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (4) : 300-304.

PDF(1113 KB)
PDF(1113 KB)
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (4) : 300-304.
Material & Technologys

Study on Gate Current Breakdown Behavior of Lattice-matched InAlN/GaN HEMTs

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2020, 40(4): 300-304

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(1113 KB)

Accesses

Citation

Detail
Sections
Recommended
Copyright © RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS, All Rights Reserved.
Powered by Beijing Magtech Co. Ltd,.

/

〈 〉