A 180 ~ 220 GHz Balanced Frequency Doubler MMIC Using 50 nm GaN HEMT Technology

ZHANG Maoqiang, ZHANG Bin

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (2) : 83-86.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (2) : 83-86.
Wideband Semiconductor

A 180 ~ 220 GHz Balanced Frequency Doubler MMIC Using 50 nm GaN HEMT Technology

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2020, 40(2): 83-86

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