A 155~172 GHz Power Amplifier Based on GaN HEMT Technology

MA Erchen, WANG Weibo, TAO Hongqi, GUO Fangjin

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (2) : 79-82.

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PDF(969 KB)
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2020, Vol. 40 ›› Issue (2) : 79-82.
Wideband Semiconductor

A 155~172 GHz Power Amplifier Based on GaN HEMT Technology

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2020, 40(2): 79-82

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