Research on New SiGe‑HBT Devices with Pseudo N‑type Buried Layer and Its Application

LIU Donghua, CHEN Xi, QIAN Wensheng

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2025, Vol. 45 ›› Issue (2) : 0.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2025, Vol. 45 ›› Issue (2) : 0. DOI: 10.12450/j.gtdzx.202502015

Research on New SiGe‑HBT Devices with Pseudo N‑type Buried Layer and Its Application

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2025, 45(2): 0 https://doi.org/10.12450/j.gtdzx.202502015

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