Investigation on the Enhancement of p‑GaN Gate Characteristics of Enhanced Si‑based GaN HEMT

BAO Cheng, WANG Denggui, REN Chunjiang, ZHOU Jianjun, NI Zhiyuan, ZHANG Junyun

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2025, Vol. 45 ›› Issue (1) : 0.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2025, Vol. 45 ›› Issue (1) : 0. DOI: 10.12450/j.gtdzx.202501002

Investigation on the Enhancement of p‑GaN Gate Characteristics of Enhanced Si‑based GaN HEMT

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2025, 45(1): 0 https://doi.org/10.12450/j.gtdzx.202501002

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