Research Progress on β‑Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial and Al Doped Heterojunction Epitaxial Growth by MOCVD

Research Progress on β‑Ga₂O₃ Homoepitaxial and Al Doped Heterojunction Epitaxial Growth by MOCVD

LIU Yang¹, HE Yunlong¹, CHEN Guran², LU Xiaoli¹, ZHENG Xuefeng¹, MA Xiaohua¹, HAO Yue¹

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2025, Vol. 45 ›› Issue (1) : 0. DOI: 10.12450/j.gtdzx.202501001

Research Progress on β‑Ga₂O₃ Homoepitaxial and Al Doped Heterojunction Epitaxial Growth by MOCVD

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2025, 45(1): 0 https://doi.org/10.12450/j.gtdzx.202501001

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