Preparation of a 340 GHz Low-noise Amplifier Based on 101.6 mm Wafer 35 nm InP HEMT Process

SUN Yuan, CHEN Zhongfei, LU Haiyan, WU Shaobing, REN Chunjiang, WANG Weibo, ZHANG Junyun

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (5) : 379-383.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (5) : 379-383. DOI: 10.12450/j.gtdzx.202405003
Solid-state Terahertz Devices & Applications

Preparation of a 340 GHz Low-noise Amplifier Based on 101.6 mm Wafer 35 nm InP HEMT Process

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 44(5): 379-383 https://doi.org/10.12450/j.gtdzx.202405003

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