Research on the Application of Floating Gate and High‑voltage Gate Co‑doping in EEPROM

LIU Donghua, CHEN Yuncong, QIAN Wensheng

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (4) : 363-366.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (4) : 363-366. DOI: 10.12450/j.gtdzx.202404015
Device & Material & Technology

Research on the Application of Floating Gate and High‑voltage Gate Co‑doping in EEPROM

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 44(4): 363-366 https://doi.org/10.12450/j.gtdzx.202404015

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