An AlGaN/GaN HEMT Device with High ESD Discharge Current Capability

WU Jiaxu, CHENG Jianbing, SUN Yang, ZHOU Chenglong, JIANG Shengjie

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (4) : 289-294.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (4) : 289-294. DOI: 10.12450/j.gtdzx.202404003
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An AlGaN/GaN HEMT Device with High ESD Discharge Current Capability

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 44(4): 289-294 https://doi.org/10.12450/j.gtdzx.202404003

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