Effect of Tensile Strain on the Structure and Electronic Properties of Carbon Related Defects Near the SiC/SiO2 Interface

MA Yujie, LIU Han, ZHANG Yuan, CUI Pengfei, SU Yan, WANG Dejun

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (3) : 206-212.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (3) : 206-212. DOI: 10.12450/j.gtdzx.202403004
Wideband Semiconductor

Effect of Tensile Strain on the Structure and Electronic Properties of Carbon Related Defects Near the SiC/SiO2 Interface

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 44(3): 206-212 https://doi.org/10.12450/j.gtdzx.202403004

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