SEGR Analysis of Enhanced β‑Ga2O3 VDMOS Device with High k Gate Dielectric

WANG Tao, ZHANG Lili, DUAN Xinpei, YIN Yanan, ZHOU Xinjie

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (1) : 6-12.

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RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS ›› 2024, Vol. 44 ›› Issue (1) : 6-12. DOI: 10.12450/j.gtdzx.202401002
Wideband Semiconductor

SEGR Analysis of Enhanced β‑Ga2O3 VDMOS Device with High k Gate Dielectric

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 44(1): 6-12 https://doi.org/10.12450/j.gtdzx.202401002

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