增强型Si基GaN HEMT的p‑GaN栅特性改善研究
鲍诚, 王登贵, 任春江, 周建军, 倪志远, 章军云
Investigation on the Enhancement of p‑GaN Gate Characteristics of Enhanced Si‑based GaN HEMT
BAO Cheng, WANG Denggui, REN Chunjiang, ZHOU Jianjun, NI Zhiyuan, ZHANG Junyun
固体电子学研究与进展
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2025, (1): 0
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DOI: 10.12450/j.gtdzx.202501002
