基于MOCVD的β‑Ga2O3同质外延与Al掺异质结外延生长研究进展
刘洋1, 何云龙1, 陈谷然2, 陆小力1, 郑雪峰1, 马晓华1, 郝跃1
Research Progress on β‑Ga2O3 Homoepitaxial and Al Doped Heterojunction Epitaxial Growth by MOCVD
LIU Yang1, HE Yunlong1, CHEN Guran2, LU Xiaoli1, ZHENG Xuefeng1, MA Xiaohua1, HAO Yue1
固体电子学研究与进展
.
2025, (1): 0
.
DOI: 10.12450/j.gtdzx.202501001
