不同沉积温度Al2O3栅介质金刚石MOSFET器件研究
谯兵, 郁鑫鑫, 何适, 陶然, 李忠辉, 陈堂胜
Research on Diamond MOSFETs with Al2O3 Gate Dielectrics Deposited at Different Temperatures
QIAO Bing, YU Xinxin, HE Shi, TAO Ran, LI Zhonghui, CHEN Tangshen
固体电子学研究与进展
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2024, (6): 552
-555
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DOI: 10.12450/j.gtdzx.202406006
