基于101.6 mm晶圆 35 nm InP HEMT工艺的340 GHz低噪声放大器芯片研制
孙远, 陈忠飞, 陆海燕, 吴少兵, 任春江, 王维波, 章军云
Preparation of a 340 GHz Low-noise Amplifier Based on 101.6 mm Wafer 35 nm InP HEMT Process
SUN Yuan, CHEN Zhongfei, LU Haiyan, WU Shaobing, REN Chunjiang, WANG Weibo, ZHANG Junyun
固体电子学研究与进展
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2024, (5): 379
-383
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DOI: 10.12450/j.gtdzx.202405003
