高k栅介质增强型β‑Ga2O3 VDMOS器件的单粒子栅穿效应研究
王韬, 张黎莉, 段鑫沛, 殷亚楠, 周昕杰
SEGR Analysis of Enhanced β‑Ga2O3 VDMOS Device with High k Gate Dielectric
WANG Tao, ZHANG Lili, DUAN Xinpei, YIN Yanan, ZHOU Xinjie
固体电子学研究与进展
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2024, (1): 6
-12
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DOI: 10.12450/j.gtdzx.202401002
