A novel dual-junction single-photon avalanche diode （SPAD） detector structure was proposed in 180 nm BCD technology. The N-well/high-voltage P-well/N buried layer structure was used to form two vertically stacked PN junctions. The high-voltage P-well and N buried layer formed a deeper primary avalanche zone， which enhanced the detection probability of the near-infrared photons. Meanwhile， a shallow secondary avalanche region was formed by the N-well/high-voltage P-well， provided high detection efficiency for the blue and green light. Thus， the spectral response range of the device could be improved when the two junctions work simultaneously. The TCAD simulation results show that compared with the traditional P-well/deep N-well structure， the dual-junction SPAD can effectively improve the photon detection probability in wide spectral range of 300-940 nm， even reaching 20.6% at 800 nm. Furthermore， at 3 V excess bias， a low dark count rate of 0.8 kHz and afterpulsing probability of 3.2% are obtained.
LIU Danlu.
Research of a Dual‑junction Single Photon Avalanche Diode with Wide Spectrum Response[J]. RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS, 2023, 43(5): 424-429
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