应用氮化镓高电子迁移率晶体管设计并实现了一种基于F类和逆F类工作模式的双频段功率放大器。首先,分别讨论了F类和逆F类工作模式在理想晶体管和实际晶体管中的差异,结合动态负载线和电压电流波形,对实际晶体管功率和效率下降的原因作了深入分析。在此基础上,提出一种在双频段分别实现F类和逆F类工作模式的输出匹配电路。基于该匹配电路,仿真设计了一款双模式、双频带功率放大器,并进行了实物加工和性能测试。实测结果表明,在L和S频段200 MHz带宽范围内,功放输出功率分别大于41.3 dBm和41.2 dBm,漏极效率分别高于72%和69%,其峰值功率和效率在L频段为41.7 dBm和75.5%,在S频段为41.3 dBm和69.5%。实测和仿真结果吻合度高,证明了提出的设计方法的正确性和有效性。
Abstract
In this paper, a dual-band power amplifier based on class F and inverse class F operating modes was designed and implemented by using GaN high electron mobility transistors. Firstly, the differences between the ideal and actual transistors operating in the class F and inverse class F modes were discussed respectively, and the reasons for power and efficiency degradation in actual transistors were analyzed in depth with dynamic load lines and voltage and current waveforms. Based on this, an output matching circuit was proposed to realize class F and inverse class F operation modes in dual-band respectively. A dual-mode, dual-band power amplifier was simulated and designed using this matching circuit, and a prototype was developed and tested. The measured results show that the output power of the power amplifier is greater than 41.3 dBm and 41.2 dBm over 200 MHz bandwidth in L and S bands, respectively. The drain efficiency is higher than 72% and 69%. Peak power and efficiency reach 41.7 dBm and 75.5% in L-band and 41.3 dBm and 69.5% in S-band. The measured and simulated results are in good agreement, which proves the correctness and effectiveness of the design method proposed in this paper.
关键词
F类 /
逆F类 /
双频带 /
功率放大器
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Key words
class F /
inverse class F /
dual band /
power amplifier
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中图分类号：
TN83
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参考文献
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