通过设计圆形阳极以及相同面积不同周长的指形阳极,研究了不同阳极周长面积比对太赫兹频段内GaN肖特基二极管串联电阻的影响。在阳极面积分别为7.1、12.6、19.6 μm2时,采用圆形阳极的二极管串联电阻分别为14、11、6 Ω。相同面积下采用指形阳极的二极管串联电阻分别为6.0、4.4、3.3 Ω,截止频率达804、753、791 GHz,截止频率分别提升了27%、35%、25%。结果表明,适当提升肖特基二极管阳极的周长面积比能降低串联电阻,提高二极管的截止频率。
Abstract
By designing round anodes and finger anodes with the same area and different circumferences,the influence of the ratio of perimeter to area of anode on the series resistance of GaN Schottky barrier diodes in THz band was reported in this paper. When the anode area is 7.1 μm2, 12.6 μm2 and 19.6 μm2, the series resistance of the diode with circular anode is 14, 11 and 6 Ω. However, in the case of the same anode area, the series resistance of the diode with finger anode is 6, 4.4 and 3.3 Ω respectively, the cut-off frequency is 804, 753 and 791 GHz respectively, and the cut-off frequency is increased by 27%,35% and 25% respectively. The results show that properly increasing the ratio of anode perimeter to area of Schottky barrier diode can significantly reduce the series resistance and increase the cut-off frequency.
关键词
GaN /
肖特基二极管 /
太赫兹 /
周长面积比 /
指形阳极
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Key words
GaN /
Schottky barrier diode（SBD） /
Terahertz（ THz） /
ratio of perimeter to area /
finger anode
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中图分类号：
TN312
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参考文献
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[3] Feng Z H, Liang S X, Xing D, et al.High-frequency multiplier based on GaN planar schottky barrier diodes[C]. 2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications(IMWS-AMP), 2016: 1-3.
[4] Yang Y L, Zhang B, Wang Y, et al. Development of high power 220 GHz frequency triplers based on Schottky diodes[C]. IEEE Access,2020,PP(99):1.
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[7] 代鲲鹏,张凯,林罡.GaN太赫兹肖特基变容二极管倍频效率的研究[J]. 电子元件与材料,2018,37(12):8.
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脚注
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基金
* 国家自然科学基金资助项目（61874101）
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