通过对CMOS芯片引线键合过程中发生铝焊盘剥落和出现“弹坑”两种现象进行分析,明确了该类故障现象的发生是由于键合焊盘受到了不同程度的机械作用而产生的不同程度的损伤。对可能造成该类故障现象的因素进行分析,主要因素有：芯片自身存在结构薄弱或原始缺陷,键合材料、键合参数等匹配不佳,操作中引入的不当因素等。对引线键合的方式和原材料进行优化,选定自动金球键合工艺,并采用单一变量法和正交优化法对自动金球键合的工艺参数进行优化,给出了自动金球键合工艺参数优选范围。通过环境试验对CMOS芯片自动金球键合工艺进行了可靠性评价。

Through the analysis of the two phenomena of aluminum pad peeling and crater appearing in the lead bonding process of CMOS chip, it is clear that the occurrence of this kind of fault phenomenon is due to different degrees of damage caused by different degrees of mechanical action on the bonding pad. The factors that may cause this kind of fault were analyzed. The main factors are the weak structure or the original defect of the chip itself, the poor matching between bonding materials and bonding parameters in the bonding process, and the improper factors introduced in the operation. The lead bonding methods and raw materials were optimized, the automatic golden ball bonding technique was selected, and the technical parameters of automatic gold ball bonding were optimized by single variable method and orthogonal optimization method, and the optimal range of technical parameters of automatic golden ball bonding was given. The reliability of CMOS chip automatic golden ball bonding process was evaluated by environmental test.