温度补偿高谐波抑制功率放大器的设计

曾凡杰, 周正轩, 蓝焕青, 章国豪

固体电子学研究与进展 ›› 2020, Vol. 40 ›› Issue (2) : 110-115.

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固体电子学研究与进展 ›› 2020, Vol. 40 ›› Issue (2) : 110-115.
射频与微波

温度补偿高谐波抑制功率放大器的设计

  • 曾凡杰, 周正轩, 蓝焕青, 章国豪**
作者信息 +

Design of Temperature Compensated High Harmonic Suppression Power Amplifier

  • ZENG Fanjie, ZHOU Zhengxuan, LAN Huanqing, ZHANG Guohao
Author information +
文章历史 +

摘要

针对无线通信应用系统,采用了一种具有温度补偿特性的偏置电路和一种带有谐波抑制功能的输出匹配网络,设计了一款高线性高谐波抑制的功率放大器。该功率放大器采用InGaP/GaAs HBT工艺,工作频率为1.84 GHz,供电电压为4.5 V,偏置电压为2.85 V。测试结果表明,常温下,功率放大器的增益为32 dB,饱和输出功率可达33 dBm,二次、三次谐波分量都小于-55 dBc,在输出功率为24.5 dBm时,邻道抑制比为-47 dBc,在-40~85 ℃温度变化范围内,功率放大器增益与邻道抑制比基本不变。

Abstract

A high linearity and high harmonic suppression power amplifier was designed in this paper for wireless communication application system,by using a bias circuit with temperature compensation characteristic and an output matching network with harmonic suppression. The power amplifier uses InGaP/GaAs HBT process,operating at 1.84 GHz with a supply voltage of 4.5 V and a bias voltage of 2.85 V. The test results show that the power amplifier has a gain of 32 dB and a saturated output power of 33 dBm at normal temperature. The second and third harmonic components are less than -55 dBc. When the output power is 24.5 dBm, the adjacent channel rejection ratio is -47 dBc. In the temperature range of -40~85 °C, the power amplifier gain and adjacent channel rejection ratio are basically unchanged.

关键词

高线性 / 谐波抑制 / 功率放大器 / 温度补偿

Key words

high linearity / harmonic suppression / power amplifier / temperature compensation

引用本文

导出引用
曾凡杰, 周正轩, 蓝焕青, 章国豪. 温度补偿高谐波抑制功率放大器的设计[J]. 固体电子学研究与进展, 2020, 40(2): 110-115
ZENG Fanjie, ZHOU Zhengxuan, LAN Huanqing, ZHANG Guohao. Design of Temperature Compensated High Harmonic Suppression Power Amplifier[J]. RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS, 2020, 40(2): 110-115
中图分类号: TN431   

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基金

* 国家自然科学基金资助项目(61574049); 广东省省级科技计划资助项目(2017B090908007); 广东省省级科技计划资助项目(2015B010127015)
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