针对无线通信应用系统,采用了一种具有温度补偿特性的偏置电路和一种带有谐波抑制功能的输出匹配网络,设计了一款高线性高谐波抑制的功率放大器。该功率放大器采用InGaP/GaAs HBT工艺,工作频率为1.84 GHz,供电电压为4.5 V,偏置电压为2.85 V。测试结果表明,常温下,功率放大器的增益为32 dB,饱和输出功率可达33 dBm,二次、三次谐波分量都小于-55 dBc,在输出功率为24.5 dBm时,邻道抑制比为-47 dBc,在-40~85 ℃温度变化范围内,功率放大器增益与邻道抑制比基本不变。
Abstract
A high linearity and high harmonic suppression power amplifier was designed in this paper for wireless communication application system,by using a bias circuit with temperature compensation characteristic and an output matching network with harmonic suppression. The power amplifier uses InGaP/GaAs HBT process,operating at 1.84 GHz with a supply voltage of 4.5 V and a bias voltage of 2.85 V. The test results show that the power amplifier has a gain of 32 dB and a saturated output power of 33 dBm at normal temperature. The second and third harmonic components are less than -55 dBc. When the output power is 24.5 dBm, the adjacent channel rejection ratio is -47 dBc. In the temperature range of -40~85 °C, the power amplifier gain and adjacent channel rejection ratio are basically unchanged.
关键词
高线性 /
谐波抑制 /
功率放大器 /
温度补偿
{{custom_keyword}} /
Key words
high linearity /
harmonic suppression /
power amplifier /
temperature compensation
{{custom_keyword}} /
中图分类号:
TN431
{{custom_clc.code}}
({{custom_clc.text}})
{{custom_sec.title}}
{{custom_sec.title}}
{{custom_sec.content}}
参考文献
[1] Zhang G, Khesbak S, Agarwal A, et al.Evolution of RFIC handset PAs[J]. IEEE Microwave Magazine, 2010,11(1): 60-69.
[2] Kim J, Moon J, Kim J, et al.A novel design method of highly efficient saturated power amplifier based on self-generated harmonic currents[C]. Proceedings of the European Microwave Conference, 2009: 1082-1085.
[3] CS C.RF Power Amplifiers for Wireless Communications[M]. Norwood:Artech House Publishers, 2006.
[4] Noh Y S, Park CSJS-SC.PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit[J]. IEEE Journal of Solid-state Circuits, 2002,37(9): 1096-1099.
[5] Sevimli O, Parker A E, Fattorini A P, et al.Measurement and modeling of thermal behaviour in InGaP/GaAs HBTs[J]. IEEE Transactions on Electron Devices, 2013,60(5): 1632-1639.
[6] Noh Y S, Park CSJIJoS-SC. An intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA applications[J]. IEEE Journal of Solid-state Circuits, 2004,39(6): 967-970.
[7] 黄继伟, 王志功, 廖英豪, 等. 应用于移动终端的线性功率放大器设计[J]. 固体电子学研究与进展, 2012,32(1): 40-44.
[8] Moon J, Jee S, Kim J, et al.Behaviors of class-F and class-amplifiers[J]. IEEE Transactions on Microwave Theory & Techniques, 2012,60(6): 1937-1951.
[9] Kang D, Kim D, Choi J, et al.A multimode/multiband power amplifier with a boosted supply modulator[J]. IEEE Transactions on Microwave Theory&Techniques, 2010,58(10): 2598-2608.
[10] Yu Z, Metzger A G, Zampardi P J, et al.Linearity improvement of HBT-based doherty power amplifiers based on a simple analytical model[C]. Proceedings of the International Microwave Symposium Digest, 2006: 877-880.
[11] Hau G, Hussain A, Turpel J, et al.A 3×3 mm2 LTE/WCDMA dual-mode power amplifier module with integrated high directivity coupler[C]. Proceedings of the IEEE Bipolar/bicmos Circuits & Technology Meeting, 2011: 138-141.
[12] Jeon J, Kim J, Kwon YJEL.Temperature compensating bias circuit for GaAs HBT RF power amplifiers with stage bypass architecture[J]. Electronics Letters, 2008,44(19): 1141-1143.
[13] 黄亮, 章国豪, 张志浩, 等. 一种带有温度补偿电路的射频功率放大器[J]. 电子科技大学学报, 2015,44(6): 814-817.
{{custom_fnGroup.title_cn}}
脚注
{{custom_fn.content}}
基金
* 国家自然科学基金资助项目(61574049); 广东省省级科技计划资助项目(2017B090908007); 广东省省级科技计划资助项目(2015B010127015)
{{custom_fund}}