Sub‑6 GHz GaAs pHEMT高功率吸收型单刀双掷开关

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固体电子学研究与进展 ›› 2024, Vol. 44 ›› Issue (1) : 39-44. DOI: 10.12450/j.gtdzx.202401008

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High‑power Absorptive Single‑pole Double‑throw Switch Using GaAs pHEMT Technology for Sub‑6 GHz Applications

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{{article.zuoZheCn_L}}. {{article.title_cn}}[J]. {{journal.qiKanMingCheng_CN}}, 2024, 44(1): 39-44 https://doi.org/10.12450/j.gtdzx.202401008

{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 44(1): 39-44 https://doi.org/10.12450/j.gtdzx.202401008

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